Interface Engineering of Magnetism in 2D van der Waals Heterostructures

In this talk, I will explore how interfaces in 2D heterostructures can be engineered to control and electrically probe magnetism. Using the metallic ferromagnet Fe₃GeTe₂ (FGT) as a model system, I will present two complementary approaches. First, a chemical strategy employing metal phthalocyanine molecules to tailor magnetic coupling at the interface through their spin state. Second, an electro-ionic approach, where oxygen-ion migration in engineered oxide layers enables bidirectional voltage control of exchange bias. Leveraging this voltage dependence, I will further show how magnetization can be deterministically switched. Finally, to provide a broader perspective on the evolution of the field of 2D van der Waals materials, I will briefly discuss how research is moving beyond static interfaces toward more dynamic and twist-engineered systems. In particular, I will introduce recent results on twisted heterostructures based on the semiconducting magnet CrSBr, where controlled stacking gives rise to emergent magnetic phenomena at the sub-monolayer scale. References:  Sharma, M. et al., Molecular Engineering of Exchange Bias in Fe3GeTe2/Molecule Heterostructures. ACS Appl Electron Mater 2025, 7 (19) 9204-9211. Sharma, M. et al., Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van Der Waals Ferromagnet. Adv Mater Interfaces 2025, 12 (8), 2400678.