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ALD Beneq TFS 200

ALD Beneq TFS 200

BENEQ TFS-200

The Beneq TFS 200 Atomic Layer Deposition (ALD) system is designed for advanced thin film research purposes, with both thermal ALD capability, and plasma option for Plasma-Enhanced ALD (PEALD), in-situ etching, substrate pre-treatment and substrate post-treatment. Substrate alternatives include wafers and other planar substrates, complex 3D substrates as well as powders and other porous substrates.

No
  • Water cooled cold-wall vacuum chamber
  • Hot-wall reaction chamber inside the vacuum chamber
  • Process temperature up to 500ºC
  • Top or side substrate loading
  • Up to 200 mm wafers
  • Two liquid precursor lines
  • Two hot precursor sources (up to 300ºC) for precursors with low vapor pressure or solid precursors
Research Groups: 
Related Sectors: 
Automotive industry
Building and construction industry
Glass coatings
Material science industry
Microelectronics and semiconductor industry
Optoelectronic and optical industry
Photovoltaic
Renewable energy
Semiconductors
Solar cell industry
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